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LT5515 1.5GHz to 2.5GHz Direct Conversion Quadrature Demodulator
FEATURES

DESCRIPTIO
Frequency Range: 1.5GHz to 2.5GHz High IIP3: 20dBm at 1.9GHz High IIP2: 51dBm at 1.9GHz Noise Figure: 16.8dB at 1.9GHz Conversion Gain: -0.7dB at 1.9GHz I/Q Gain Mismatch: 0.3dB I/Q Phase Mismatch: 1 Shutdown Mode 16-Lead QFN 4mm x 4mm Package with Exposed Pad
The LT (R)5515 is a 1.5GHz to 2.5GHz direct conversion quadrature demodulator optimized for high linearity receiver applications. It is suitable for communications receivers where an RF signal is directly converted into I and Q baseband signals with bandwidth up to 260MHz. The LT5515 incorporates balanced I and Q mixers, LO buffer amplifiers and a precision, high frequency quadrature generator. In an RF receiver, the high linearity of the LT5515 provides excellent spur-free dynamic range, even with fixed gain front end amplification. This direct conversion receiver can eliminate the need for intermediate frequency (IF) signal processing, as well as the corresponding requirements for image filtering and IF filtering. Channel filtering can be performed directly at the outputs of the I and Q channels. These outputs can interface directly to channelselect filters (LPFs) or to a baseband amplifier.
LT, LTC and LTM are registered trademarks of Linear Technology Corporation. All other trademarks are the property of their respective owners.
APPLICATIO S

Cellular/PCS/UMTS Infrastructure High Linearity Direct Conversion I/Q Receiver High Linearity I/Q Demodulator RF Power Amplifier Linearization
TYPICAL APPLICATIO
5V BPF LNA BPF RF + VCC LT5515 IOUT+ IOUT- LPF
POUT, IM2, IM3 (dBm/TONE)
VGA RF - LO + QOUT+ 0/90 LO - ENABLE EN 90 QOUT
-
0
DSP LO INPUT LPF VGA
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Figure 1. High Signal-Level I/Q Demodulator for Wireless Infrastructure
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I/Q Output Power, IM2, IM3 vs RF Input Power
20 0 POUT - 20 IM3 - 40 IM2 - 60 - 80 -100 -16 TA = 25C PLO = -5dBm fLO = 1901MHz fRF1 = 1899.9MHz fRF2 = 1900.1MHz -12 -8 -4 0 RF INPUT POWER (dBm) 4 8
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ABSOLUTE
(Note 1)
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PACKAGE/ORDER I FOR ATIO
TOP VIEW
Power Supply Voltage ............................................ 5.5V Enable Voltage ...................................................... 0, VCC LO + to LO - Differential Voltage ............................... 2V (+10dBm Equivalent) + to RF - Differential Voltage ................................ 2V RF (+10dBm Equivalent) Operating Ambient Temperature ..............-40C to 85C Storage Temperature Range ................. - 65C to 125C Maximum Junction Temperature .......................... 125C
ORDER PART NUMBER
12 VCC
QOUT +
16 15 14 13 GND 1 RF + 2 RF
-
QOUT -
IOUT +
IOUT -
LT5515EUF
3
17
11 LO - 10 LO + 9 VCC
GND 4 5 6 7 8
VCM
VCC
UF PACKAGE 16-LEAD (4mm x 4mm) PLASTIC QFN EXPOSED PAD (PIN 17) IS GND, MUST BE SOLDERED TO PCB TJMAX = 125C, JA = 38C/W
VCC
UF PART MARKING 5515
Order Options Tape and Reel: Add #TR Lead Free: Add #PBF Lead Free Tape and Reel: Add #TRPBF Lead Free Part Marking: http://www.linear.com/leadfree/ Consult LTC Marketing for parts specified with wider operating temperature ranges.
AC ELECTRICAL CHARACTERISTICS
PARAMETER Frequency Range LO Power Conversion Gain Noise Figure Input 3rd Order Intercept Input 2nd Order Intercept Input 1dB Compression Baseband Bandwidth I/Q Gain Mismatch I/Q Phase Mismatch Output Impedance LO to RF Leakage RF to LO Isolation (Note 4) (Note 4) Differential CONDITIONS
TA = 25C. VCC = 5V, fRF1 = 1899.9MHz, fRF2 = 1900.1MHz, fLO = 1901MHz, PLO = -5dBm unless otherwise noted. (Notes 2, 3) (Test circuit shown in Figure 2)
MIN TYP 1.5 to 2.5 -10 to 0 Voltage Gain, Load Impedance = 1k 2-Tone, -10dBm/Tone, f = 200kHz 2-Tone, -10dBm/Tone, f = 200kHz -3 -0.7 16.8 20 51 9 260 0.3 1 120 - 46 46 0.7 MAX UNITS GHz dBm dB dB dBm dBm dBm MHz dB deg dBm dB
EN
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DC ELECTRICAL CHARACTERISTICS
PARAMETER Supply Voltage Supply Current Shutdown Current Turn-On Time Turn-Off Time EN = High (On) EN = Low (Off) EN Input Current Output DC Offset Voltage (IOUT+ - IOUT-, QOUT+ - QOUT-) Output DC Offset Variation vs Temperature VENABLE = 5V EN = Low CONDITIONS
TA = 25C. VCC = 5V unless otherwise noted.
MIN 4 95 125 120 650 1.6 1.3 2 4 30 25 TYP MAX 5.25 160 20 UNITS V mA A ns ns V V A mV V/C
fLO = 1901MHz, PLO = -5dBm - 40C to 85C
Note 1: Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. Exposure to any Absolute Maximum Rating condition for extended periods may affect device reliability and lifetime. Note 2: Tests are performed as shown in the configuration of Figure 2 with R1 = 8.2, unless otherwise noted.
Note 3: Specifications over the - 40C to 85C temperature range are assured by design, characterization and correlation with statistical process control. Note 4: Measured at PRF = -5dBm and output frequency = 1MHz.
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LT5515 TYPICAL PERFOR A CE CHARACTERISTICS
(Test circuit optimized for 1.9GHz operation as shown in Figure 2) Conv Gain, NF, IIP3 vs RF Input Frequency
25 IIP3 150 SUPPLY CURRENT (mA) TA = 85C 130 TA = 25C 110 TA = - 40C 90 GAIN (dB), NF (dB), IIP3 (dBm) 20 NF 15 10 5 0 CONV GAIN 70 4.0 4.5 5.0 SUPPLY VOLTAGE (V) 5.5
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Supply Current vs Supply Voltage
170
PLO = -5dBm TA = 25C VCC = 5V
IIP2 (dBm)
I/Q Output Power, IM3 vs RF Input Power
20 0 POUT, IM3 (dBm/TONE) -20 TA = - 40C -40 TA = 25C -60 -80 -100 -16 TA = 85C fLO = 1901MHz VCC = 5V OUTPUT POWER 1.0 GAIN MISMATCH (dB) IM3 1.4
TA = 85C 0.6 TA = 25C TA = - 40C 0.2
PHASE MISMATCH (DEG)
-12
-8 -4 0 RF INPUT POWER (dBm)
Conv Gain, IIP3 vs Supply Voltage
24 20 CONV GAIN (dB), IIP3 (dBm) 16 12 8 4 0 -4 4.0 TA = 85C 4.5 5.0 SUPPLY VOLTAGE (V) 5.5
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IIP3
TA = 85C TA = 25C CONV GAIN (dB), IIP3 (dBm) TA = - 40C 18 fRF = 1.7GHz fRF = 1.9GHz 16 fRF = 2.1GHz 20 16 12 8 4
fLO = 1901MHz PLO = -5dBm TA = 25C CONV GAIN TA = - 40C
NF (dB)
4
UW
4 8
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IIP2 vs RF Input Frequency
70 PLO = -5dBm TA = 25C VCC = 5V
60
50
40
30
-5 1.7
1.8
2.3 2.2 1.9 2.0 2.1 RF INPUT FREQUENCY (GHz)
2.4
20 1.7
1.8
2.3 1.9 2.0 2.1 2.2 RF INPUT FREQUENCY (GHz)
2.4
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I/Q Gain Mismatch vs RF Input Frequency
6 fBB = 1MHz PLO = -5dBm VCC = 5V 4 2 0 -2 -4
I/Q Phase Mismatch vs RF Input Frequency
fBB = 1MHz PLO = -5dBm
TA = 85C TA = 25C
TA = - 40C
- 0.2
- 0.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 RF INPUT FREQUENCY (GHz) 2.4
-6 1.7
1.8
2.3 2.2 1.9 2.0 2.1 RF INPUT FREQUENCY (GHz)
2.4
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NF vs LO Input Power
20 24
Conv Gain, IIP3 vs LO Input Power
IIP3 TA = 25C TA = - 40C TA = 85C
fLO = 1901MHz VCC = 5V TA = 25C TA = - 40C TA = 85C -10 -8 -6 -4 -2 LO INPUT POWER (dBm) 0
14 TA = 25C VCC = 5V 12 -12 -10 -2 -8 -6 -4 LO INPUT POWER (dBm) 0
CONV GAIN 0 -4 -12
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LT5515 TYPICAL PERFOR A CE CHARACTERISTICS
(Test circuit optimized for 1.9GHz operation as shown in Figure 2) LO-RF Leakage vs LO Input Power
-40 TA = 25C VCC = 5V LO-RF LEAKAGE (dBm) fRF = 1.9GHz fRF = 2.2GHz -50 fRF = 2.4GHz -55 fRF = 1.7GHz RF-LO ISOLATION (dB) -45 80 70 60 50 40 30 -60 -12 20 -15 fRF = 1.7GHz
IIP2 vs LO Input Power
70 fLO = 1901MHz 65 VCC = 5V 60 IIP2 (dBm) 55 50 45 40 35 30 -10 -8 -2 -4 LO INPUT POWER (dBm) -6 0
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TA = - 40C
TA = 25C TA = 85C
RF, LO Port Return Loss vs Frequency
0 2
0 -5 RETURN LOSS (dB) CONV GAIN (dB) -2
GAIN (dB), NF (dB), IIP3 (dBm)
-10 RF LO -15
-20 1.5
2.5 2.0 FREQUENCY (GHz)
SUPPLY CURRENT (mA), IIP2 (dBm)
UW
3.0
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RF-LO Isolation vs RF Input Power
TA = 25C VCC = 5V
fRF = 2.4GHz fRF = 2.2GHz fRF = 1.9GHz
-10
-8 -6 -4 -2 LO INPUT POWER (dBm)
0
-10
-5 0 5 RF INPUT POWER (dBm)
10
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Conv Gain vs Baseband Frequency
25
Conv Gain, NF, IIP3 vs R1
IIP3 fLO = 1901MHz PLO = -5dBm TA = 25C VCC = 5V
TA = - 40C TA = 25C TA = 85C
20 15 10 5 0 -5 CONV GAIN NF
-4
-6 fLO = 1.9GHz VCC = 5V 0.1 10 1 100 BASEBAND FREQUENCY (MHz) 1000
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2
3
4
5
6 7 R1 ()
8
9
10
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Supply Current, IIP2 vs R1
150 130 110 SUPPLY CURRENT
fLO = 1901MHz PLO = -5dBm 90 TA = 25C VCC = 5V 70 50 30 IIP2
2
3
4
5
6 7 R1 ()
8
9
10
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PI FU CTIO S
GND (Pins 1, 4): Ground Pin. RF +, RF - (Pins 2, 3): Differential RF Input Pins. These pins are internally biased to 1.54V. They must be driven with a differential signal. An external matching network is required for impedance transformation. VCC (Pins 5, 8, 9, 12): Power Supply Pins. These pins should be decoupled using 1000pF and 0.1F capacitors. VCM (Pin 6): Common Mode and DC Return for the I-Mixer and Q-Mixer. An external resistor must be connected between this pin and ground to set the DC bias current of the I/Q demodulator. EN (Pin 7): Enable Pin. When the input voltage is higher than 1.6V, the circuit is completely turned on. When the input voltage is less than 1.3V, the circuit is turned off. LO +, LO - (Pins 10, 11): Differential Local Oscillator Input Pins. These pins are internally biased to 2.44V. They can be driven single-ended by connecting one to an AC ground through a 1000pF capacitor. However, differential input drive is recommended to minimize LO feedthrough to the RF input pins. QOUT-, QOUT+ (Pins 13, 14): Differential Baseband Output Pins of the Q-Channel. The internal DC bias voltage is VCC -0.85V for each pin. IOUT-, IOUT+ (Pins 15, 16): Differential Baseband Output Pins of the I-Channel. The internal DC bias voltage is VCC -0.85V for each pin. GROUND (Pin 17, Backside Contact): Ground Return for the Entire IC. This pin must be soldered to the printed circuit board ground plane.
BLOCK DIAGRA
VCM 6 Q-MIXER BIAS 7 EN 1 4 17 10 LO + 11 LO -
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VCC 5
VCC 8
VCC 9
VCC 12 I-MIXER LPF 16 IOUT+ 15 IOUT- LO BUFFERS 0/90
RF AMP RF + 2 RF - 3 LPF
14 QOUT+ 13 QOUT-
GND GND
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TEST CIRCUITS
J3 IOUT- C21 (OPT) J4 IOUT+ C19 (OPT)
IOUT + IOUT - QOUT + QOUT -
J5 C18 (OPT) J6 C20 (OPT) QOUT- QOUT+
T1 J1 LDB311G9020C-452 RF 2 6 1 4 C1 100pF L1 10nH GND RF + RF
-
T2 LDB311G9005C-300 J2 VCC LO - LO + VCC C5 1nF C2 100pF VCC R3 1k EN L2 (OPT) LO 6 1 4 2
LT5515
3 C17 100pF
GND
VCM VCC VCC EN
3
C16 100pF
C7 1nF
R1 4.3
R2 100k
C6 1nF
C3 0.1F
C4 2.2F
REFERENCE DESIGNATION C1, C2, C16, C17 C5, C6, C7 C3 C4 L1 R1 R2 R3 T1 T2
VALUE 100pF 1nF 0.1F 2.2F 10nH 4.3 100k 1k 1:4 1:1
SIZE 0402 0402 0402 3216 0402 0402 0402 0402
PART NUMBER AVX 04025C101JAT AVX 04025C102JAT AVX 0402ZD104KAT AVX TPSA225M010R1800 Murata LQP15M
Murata LDB311G9020C-452 Murata LDB311G9005C-300
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Figure 2. Evaluation Circuit Schematic for 1900MHz PCS/UMTS Application
Figure 3. Topside of Evaluation Board
Figure 4. Bottom Side of Evaluation Board
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APPLICATIO S I FOR ATIO
The LT5515 is a direct I/Q demodulator targeting high linearity receiver applications, including wireless infrastructure. It consists of an RF amplifier, I/Q mixers, a quadrature LO carrier generator and bias circuitry. The RF signal is applied to the inputs of the RF amplifier and is then demodulated into I/Q baseband signals using quadrature LO signals. The quadrature LO signals are internally generated by precision 90 phase shifters. The demodulated I/Q signals are lowpass filtered internally with a -3dB bandwidth of 260MHz. The differential outputs of the I-channel and Q-channel are well matched in amplitude; their phases are 90 apart. RF Input Port Differential drive is highly recommended for the RF inputs to minimize the LO feedthrough to the RF port and to maximize gain. (See Figure 2.) A 1:4 transformer is used on the demonstration board for wider bandwidth matching. To assure good NF and maximize the demodulator gain, a low loss transformer is employed. Shunt inductor L1, with high resonance frequency, is required for proper impedance matching. Single-ended to differential conversion can also be implemented using narrow band, discrete L-C circuits to produce the required balanced waveforms at the RF + and RF - inputs.The differential impedance of the RF inputs is listed in Table 1.
Table 1. RF Input Differential Impedance
FREQUENCY (GHz) 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 DIFFERENTIAL INPUT IMPEDANCE () 115.7-j132.7 111.7-j128.1 108.1-j123.7 104.8-j120.2 101.7-j116.9 98.8-j113.8 96.0-j111.1 93.3-j108.7 90.7-j106.2 88.3-j104.2 85.9-j102.2 DIFFERENTIAL S11 MAG 0.698 0.689 0.681 0.674 0.667 0.661 0.655 0.650 0.645 0.641 0.637 ANGLE() -24.9 -25.9 -26.8 -27.7 -28.5 -29.4 -30.2 -31.1 -32.0 -32.8 -33.7
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The RF+ and RF- inputs (Pins 2, 3) are internally biased at 1.54V. These two pins should be DC blocked when connected to ground or other matching components. The RF input equivalent circuit is shown in Figure 5. A 4.3 resistor (R1) is connected to Pin 6 (VCM) to set the optimum DC current for I/Q mixer linearity. The trade-off of the NF and IIP3 as a function of R1 is shown in the "Typical Performance Characteristics". When a smaller R1 is used for better linearity, the total supply current will increase. A 5V 5% power supply is recommended to assure high linearity performance. LO Input Port The LO inputs (Pins 10,11) should be driven differentially to minimize LO feedthrough to the RF port. This can be accomplished by means of a single-ended to differential conversion as shown in Figure 2. L4, the 12nH shunt inductor, serves to tune out the capacitive component of the LO differential input. The resonance frequency of the inductor should be greater than the operating frequency. A 1:2 transformer is used on the demo board to match the LO port to a 50 source. Figure 6 shows the LO input equivalent circuit and the associated matching network. Single-ended to differential conversion at the LO inputs can also be implemented using a discrete L-C circuit to produce a balanced waveform without a transformer. An alternative solution is a simple single-ended termination. However, the LO feedthrough to RF may be degraded. Either LO + or LO - input can be terminated to a 50 source with a matching circuit, while the other input is connected to ground through a 100pF bypass capacitor.
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APPLICATIO S I FOR ATIO
Table 2. LO Input Differential Impedance
FREQUENCY (GHz) 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 DIFFERENTIAL INPUT IMPEDANCE () 69.3-j59.4 64.3-j56.4 60.0-j52.7 56.4-j48.9 53.7-j44.9 51.4-j41.2 49.8-j37.5 48.6-j34.2 47.8-j31.0 47.3-j28.2 46.9-j25.6 DIFFERENTIAL S11 MAG 0.469 0.457 0.440 0.421 0.399 0.377 0.352 0.328 0.303 0.279 0.257 ANGLE () -45.8 -49.8 -53.9 -58.0 -62.2 -66.1 -69.9 -73.3 -76.5 -79.5 -82.3
Table 2 shows the differential input impedance of the LO input port.
I-Channel and Q-Channel Outputs Each of the I-channel and Q-channel outputs is internally connected to VCC though a 60 resistor. The output DC bias voltage is VCC - 0.85V. The outputs can be DC coupled or AC coupled to the external loads. The differential output impedance of the demodulator is 120 in parallel with a 5pF internal capacitor, forming a lowpass filter with a -3dB corner frequency at 260MHz. RLOAD (the single-
J1 RF
T1 LDB311G9020C-452 2 2 6 1 4 3 C1 1nF L1 10nH
3
NOTE: NO CONNECTION REQUIRED ACCORDING TO BALUN TRANSFORMER MANUFACTURER
Figure 5. RF Input Equivalent Circuit with External Matching at 1.9GHz
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ended load resistance) should be larger than 600 to assure full gain. The gain is reduced by 20 * log(1 + 120/ RLOAD) in dB when the differential output is terminated by RLOAD. For instance, the gain is reduced by 6.85dB when each output pin is connected to a 50 load (100 differential load). The output should be taken differentially (or by using differential-to-single-ended conversion) for best RF performance, including NF and IM2. The phase relationship between the I-channel output signal and Q-channel output signal is fixed. When the LO input frequency is larger (or smaller) than the RF input frequency, the Q-channel outputs (QOUT+, QOUT-) lead (or lag) I-channel outputs (IOUT+, IOUT-) by 90. When AC output coupling is used, the resulting highpass filter's -3dB roll-off frequency is defined by the R-C constant of the blocking capacitor and RLOAD, assuming RLOAD > 600. Care should be taken when the demodulator's outputs are DC coupled to the external load, to make sure that the I/Q mixers are biased properly. If the current drain from each output exceeds 6mA, there can be significant degradation of the linearity performance. Each output can sink no more than 14mA when the outputs are connected to an external load with a DC voltage higher than VCC - 0.85V. The I/Q output equivalent circuit is shown in Figure 7.
LT5515 VCC RF + 1k RF - 1.54V
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APPLICATIO S I FOR ATIO U
VCC T2 LDB311G9010C-440 10 2 6 1 4 11 C2 1nF NOTE: NO CONNECTION REQUIRED ACCORDING TO BALUN TRANSFORMER MANUFACTURER L4 12nH LO - LO + 200
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J2 LO
VCC 60 60 60 60 IOUT+ IOUT- 5pF QOUT
+
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Figure 6. LO Input Equivalent Circuit with External Matching at 1.9GHz
16 15 14 13
QOUT- 5pF
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Figure 7. I/Q Output Equivalent Circuit
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PACKAGE DESCRIPTIO
4.35 0.05 2.15 0.05 2.90 0.05 (4 SIDES)
RECOMMENDED SOLDER PAD PITCH AND DIMENSIONS BOTTOM VIEW--EXPOSED PAD 4.00 0.10 (4 SIDES) PIN 1 TOP MARK (NOTE 6) 2.15 0.10 (4-SIDES) 0.75 0.05 R = 0.115 TYP PIN 1 NOTCH R = 0.20 TYP OR 0.35 x 45 CHAMFER
NOTE: 1. DRAWING CONFORMS TO JEDEC PACKAGE OUTLINE MO-220 VARIATION (WGGC) 2. DRAWING NOT TO SCALE 3. ALL DIMENSIONS ARE IN MILLIMETERS 4. DIMENSIONS OF EXPOSED PAD ON BOTTOM OF PACKAGE DO NOT INCLUDE MOLD FLASH. MOLD FLASH, IF PRESENT, SHALL NOT EXCEED 0.15mm ON ANY SIDE 5. EXPOSED PAD SHALL BE SOLDER PLATED 6. SHADED AREA IS ONLY A REFERENCE FOR PIN 1 LOCATION ON THE TOP AND BOTTOM OF PACKAGE
Information furnished by Linear Technology Corporation is believed to be accurate and reliable. However, no responsibility is assumed for its use. Linear Technology Corporation makes no representation that the interconnection of its circuits as described herein will not infringe on existing patent rights.
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UF Package 16-Lead Plastic QFN (4mm x 4mm)
(Reference LTC DWG # 05-08-1692)
0.72 0.05 PACKAGE OUTLINE 0.30 0.05 0.65 BSC 15 16 0.55 0.20 1 2
(UF16) QFN 1004
0.200 REF 0.00 - 0.05
0.30 0.05 0.65 BSC
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RELATED PARTS
PART NUMBER LTC1757A LTC1758 LTC1957 LTC4400 LTC4401 LTC4403 LT5500 LT5502 LT5503 LT5504 LTC5505 LT5506 LTC5507 LTC5508 LTC5509 LT5511 LT5512 LT5516 DESCRIPTION RF Power Controller RF Power Controller RF Power Controller SOT-23 RF PA Controller SOT-23 RF PA Controller RF Power Controller for EDGE/TDMA RF Front End 400MHz Quadrature Demodulator with RSSI 1.2GHz to 2.7GHz Direct IQ Modulator and Up Converting Mixer 800MHz to 2.7GHz RF Measuring Receiver 300MHz to 3.5GHz RF Power Detector 500MHz Quadrature IF Demodulator with VGA 100kHz to 1GHz RF Power Detector 300MHz to 7GHz RF Power Detector 300MHz to 3GHz RF Power Detector High Signal Level Up Converting Mixer High Signal Level Down Converting Mixer 800MHz to 1.5GHz Direct Conversion Quadrature Demodulator COMMENTS Multiband GSM/DCS/GPRS Mobile Phones Multiband GSM/DCS/GPRS Mobile Phones Multiband GSM/DCS/GPRS Mobile Phones Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range, 450kHz Loop BW Multiband GSM/DCS/GPRS Phones, 45dB Dynamic Range, 250kHz Loop BW Multiband GSM/GPRS/EDGE Mobile Phones Dual LNA gain Setting +13.5dB/-14dB at 2.5GHz, Double-Balanced Mixer, 1.8V VSUPPLY 5.25V 1.8V to 5.25V Supply, 70MHz to 400MHz IF, 84dB Limiting Gain, 90dB RSSI Range 1.8V to 5.25V Supply, Four-Step RF Power Control, 120MHz Modulation Bandwidth 80dB Dynamic Range, Temperature Compensated, 2.7V to 5.5V Supply >40dB Dynamic Range, Temperature Compensated, 2.7V to 6V Supply 1.8V to 5.25V Supply, 40MHz to 500MHz IF, -4dB to 57dB Linear Power Gain 48dB Dynamic Range, Temperature Compensated, 2.7V to 6V Supply SC70 Package 36dB Dynamic Range, SC70 Package RF Output to 3GHz, 17dBm IIP3, Integrated LO Buffer DC-3GHz, 20dBm IIP3, Integrated LO Buffer 21.5dBm IIP3, Integrated LO Quadrature Generator RF Power Controllers
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Linear Technology Corporation
1630 McCarthy Blvd., Milpitas, CA 95035-7417
(408) 432-1900 FAX: (408) 434-0507
LT 0406 REV A * PRINTED IN USA
www.linear.com
(c) LINEAR TECHNOLOGY CORPORATION 2003

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